mmWave circuit design PhD student (4 years)

Key responsibilities include:

  • Design of optimized RF SOI mm-wave devices and circuits for >100 GHz applications on state-of- the art RF SOI technologies (22, 28, 45 nm nodes);
  • Wideband characterization (S-parameters, non-linearities, …) and modelling of SOI passive and active devices;
  • On-wafer small- and large-signal measurements of advanced SOI devices and circuits;
  • Collaborating with device and reliability engineers and researchers working at Incize, eV- Technologies, SOITEC, CEA-Leti, ST-Microelectronics, and GlobalFoundries.

Position requirements

  • Master with SOI device and high frequency analysis experience;
  • Familiarity with the use of high frequency EM solvers (HFSS, CST, …);
  • Familiarity with vector-network analyzer on-wafer measurement techniques;
  • Understanding of broadband high-frequency and analog device figures of merit;
  • Good communication skills and ability to work across functional teams of device, electrical characterization, reliability and layout.


Université catholique de Louvain (UCLouvain)


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